PART |
Description |
Maker |
MIE-554H4 554H4 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
554A4 MIE-554A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
Unity Opto Technology
|
LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes Infrared Light Emitting Diodes From old datasheet system GaAs Infrared Light Emitting Diode
|
Panasonic Corporation Matsshita / Panasonic PANASONIC[Panasonic Semiconductor]
|
MIE-544A4 |
GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
Unity Opto Technology
|
TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
MIE-406A4U |
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-144H4 |
GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-534A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
TSAL6200 TSAL620009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
http:// Vishay Siliconix
|
VSMY7850X011106 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|